60V, 3.7A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 120mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. .

N-Channel Enhancement Mode Field Effect Transistor

CEA3252

CEA6200

CEA6426

CEA6861

CEAS03xV0-G

CE-3101

CE-65-M

CE0010

CE0030A

CE0030B

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